Evidence for indirect recombination in GaInNAs/GaAs strained multiple quantum wells

The photoluminescence in GaInNAs/GaAs strained multiple quantum wells before and after postgrowth treatment and in GaInNAs thick layer has been measured in the temperature range 3.8–300 K and excitation power density range 0.1–200 W cm−2. The temperature-induced change of the emission energy in the quantum wells structures was found to be significantly reduced compared with that of GaInNAs thick layer. Moreover, the photoluminescence of both multiquantum wells and thick layer exhibits some anomalies and also moving with excitation emission, what we ascribe to the recombination between spatially separated and strongly localized states.