Authors : M. G. Buzynnyi, V. V. Il'chenko, P. G. Lisnyak, V. I. Strikha
DOI : 10.1007/bf00895986
Volume : 31
Issue : 9
Year : 1988
Page No : 749-752
The extremal operating states of the active elements of integrated circuits and discrete devices as well as the different actions on semiconductor devices with a Schottky barrier based on metal silicide-silicon contacts lead to a change in their physical parameters. In this work the effect of impulsive overloads on a formed platinum silicide-silicon contact is studied. It is shown, with the help of analytical expressions for the currents in the superbarrier region and in the region of resonant tunneling charge transfer, that under impulsive action a change occurs in both the transitional layer and in the region of space charge; the change is associated with the increase in the concentration of deep levels in the region of space charge that participate in the resonance tunneling. Estimates of the Joule heating by the current flowing in the structures employed do not exceed 100°C, indicating that defect formation under the impulsive actions is nonthermal.